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Параметры цитируемых публикаций



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Элементы 1—30 из 7378.
название публикацииГодРИНЦWoSАвторы
4089ASYMPTOTIC-EXPANSION FOR THE DISTRIBUTION OF A STATISTIC ADMITTING A STOCHASTIC EXPANSION DEPENDING ON LINEAR COMBINATION OF ORDER-STATISTICS UNDER CLOSE ALTERNATIVES198000 (1)
5152ON SUMMATION OF INDEPENDENT VARIABLES IN A NON-CLASSICAL SITUATION198200 (1)
5733ADAPTIVE STRATEGIES FOR SOME CLASSES OF NON-HOMOGENEOUS CONTROLLED MARKOVIAN PROCESSES198200 (1)
6766LATTICE-CONSTANT OF ALXGA1-XP198200 (2)
6767TRANSIENT THEORY OF RESONANT TUNNEL BONDS OF OPTICAL-WAVEGUIDES198200 (2)
3662BRANCHING-PROCESSES AND RANDOM MAPPINGS OF FINITE SETS198300 (1)
4915NON-CLASSICAL ESTIMATES OF THE RATE OF CONVERGENCE IN THE CENTRAL LIMIT-THEOREM TAKING INTO ACCOUNT LARGE DEVIATIONS198303 (1)
6765WAVELENGTH MULTIPLEXING OF 1.31-MU-M INGAASP BURIED CRESCENT LASER ARRAYS198300 (2)
5144ON THE EXIT OF A RANDOM-WALK FROM A CURVILINEAR BOUNDARY198400 (1)
5145WEAK AND STRONG-CONVERGENCE OF THE DISTRIBUTIONS OF COUNTING-PROCESSES198400 (1)
5146ON THE ACCURACY OF APPROXIMATION OF DISTRIBUTIONS OF SUMS OF INDEPENDENT RANDOM-VARIABLES - WHICH ARE NONZERO WITH A SMALL PROBABILITY - BY MEANS OF ACCOMPANYING LAWS198400 (1)
5148NON-UNIFORM CENTRAL LIMIT BOUNDS WITH APPLICATIONS TO PROBABILITIES OF DEVIATIONS198400 (1)
8983STANDING X-RAY WAVE TECHNIQUE IN THE INVESTIGATION OF THE GALLIUM-ARSENIDE LASER AMORPHISM198400 (2)
6760PICOSECOND LASER-PULSE EFFECT ON SI AND A3B5 SEMICONDUCTOR COMPOUNDS198500 (2)
6761INJECTION OF DEGENERATE ELECTRON-HOLE PLASMA198500 (1)
6762CONTROL OF ASTIGMATISM AND POLARIZATION OF RADIATION IN THE STRIP HETEROLASER198500 (2)
6763RAMAN-SCATTERING OF LIGHT IN GALLIUM-ARSENIDE CRYSTALS SUBJECTED TO SUBNANOSECOND LASER-PULSES198500 (2)
6764MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS198500 (2)
9174CONTROLLED MARKOV SEQUENCES WITH SLOWLY VARYING CHARACTERISTICS .1. THE PROBLEM OF ADAPTIVE-CONTROL198500 (1)
5143APPROXIMATION IN VARIATION OF THE DISTRIBUTION OF A SUM OF INDEPENDENT BERNOULLI VARIABLES WITH A POISSON LAW198600 (1)
6756ANOMALOUS RECRYSTALLIZATION AND AMORPHIZATION OF ION-IMPLANTED GAAS UNDER PICOSECOND LASER-PULSES198600 (2)
6758MELTING OF SEMICONDUCTORS UNDER THE ACTION OF PULSED LASER-RADIATION (REVIEW)198600 (2)
6753CHARACTERISTICS OF LASER ANNEALING OF INDIUM-ANTIMONIDE IN LIQUID-NITROGEN198700 (2)
6754DEGREE OF DISORDER IN LASER-ANNEALED A3B5 SEMICONDUCTORS FROM RAMAN-SCATTERING SPECTRA198700 (1)
67552-BEAM LASER ANNEALING OF SEMICONDUCTORS198700 (2)
8982OPTICAL-TEMPERATURE AUTOWAVES IN SEMICONDUCTORS198700 (1)
3661GOODNESS-OF-FIT TESTS FOR GENERALIZED URN SCHEMES BASED ON SEPARABLE STATISTICS198800 (1)
5139ON A RELATIONSHIP BETWEEN USPENSKY THEOREM AND POISSON APPROXIMATIONS198800 (2)
5142REFINEMENT OF POISSON APPROXIMATION198800 (1)
6729EFFECT OF INTRODUCTION ADMIXTURES ON LUMINESCENT PROPERTIES OF IMPLANTED INDIUM-PHOSPHIDE AFTER LASER ANNEALING198800 (2)