| 6717 | VECTORIAL QUADRATIC INTERACTIONS FOR ALL-OPTICAL SIGNAL PROCESSING VIA SECOND-HARMONIC GENERATION | 1996 | 0 | 0 | (2) |
| 6718 | OPTICAL LOGIC ELEMENTS ON THE BASE OF FIBRE BRAGG REFLECTORS | 2002 | 0 | 0 | (2) |
| 6719 | ON AN INFLUENCE AND REMOVAL OF THE INFLUENCE OF THE SIGNAL PHASE UPON SIGNAL AMPLIFICATION IN TUNNEL-COUPLED WAVE-GUIDES - REPLY | 1993 | 0 | 0 | (1) |
| 6720 | OPTICAL SWITCHING IN A DIRECTIONAL COUPLER WITH THE AID OF A NONLINEAR PHASE-SHIFT IN 2ND-HARMONIC GENERATION | 1995 | 0 | 0 | (1) |
| 6721 | LOGIC ELEMENTS BASED ON A 3-BEAM LASER | 1994 | 0 | 0 | (2) |
| 6727 | ON DENSITY ESTIMATION WITH SUPERKERNELS | 2012 | 0 | 0 | (2) |
| 6729 | EFFECT OF INTRODUCTION ADMIXTURES ON LUMINESCENT PROPERTIES OF IMPLANTED INDIUM-PHOSPHIDE AFTER LASER ANNEALING | 1988 | 0 | 0 | (2) |
| 6738 | DYNAMICS OF FEMTOSECOND LASER-INDUCED MELTING AND AMORPHIZATION OF INDIUM PHOSPHIDE | 2004 | 0 | 0 | (2) |
| 6739 | TWO BEAM LASER HEATING AND MELTING OF GAAS CRYSTAL LAYERS | 2001 | 0 | 0 | (2) |
| 6741 | SIMULATION OF PHASE TRANSITIONS INDUCED IN GALLIUM ARSENIDE BY COMBINED LASER RADIATION | 2001 | 0 | 0 | (2) |
| 6742 | NANOSECOND LASER ANNEALING OF ZINC-DOPED INDIUM PHOSPHIDE | 1999 | 0 | 0 | (2) |
| 6744 | PHOTOANALYZERS OF POLARIZED EMISSION AT AU-GA1-XALXAS AND AU-GA1-XALXP STRUCTURES | 1993 | 0 | 0 | (2) |
| 6745 | MELTING AND DAMAGE PRODUCTION IN SILICON-CARBIDE UNDER PULSED LASER IRRADIATION | 1990 | 0 | 0 | (2) |
| 6747 | STRUCTURAL AND MAGNETIC-PROPERTIES OF LASER-ANNEALED MAGNETOOPTIC THIN-FILMS | 1990 | 0 | 0 | (2) |
| 6748 | FORMATION OF METASTABLE STATES OF LIQUID-PHASE ON FUSION OF THE SEMICONDUCTING COMPOUNDS A3B5 BY NANOSECOND LASER-PULSES | 1989 | 0 | 0 | (2) |
| 6749 | SEMICONDUCTOR-METAL PHASE-TRANSITION IN INSB INDUCED BY A STRONG ELECTROMAGNETIC-FIELD | 1988 | 0 | 0 | (2) |
| 6751 | PHOTOLUMINESCENCE OF MODIFIED GAAS-TE CRYSTALS | 1988 | 0 | 0 | (2) |
| 6752 | FUSION OF SILICON-CARBIDE UNDER THE EFFECT OF EXIMER LASER NANOSECOND PULSES | 1988 | 0 | 0 | (2) |
| 6753 | CHARACTERISTICS OF LASER ANNEALING OF INDIUM-ANTIMONIDE IN LIQUID-NITROGEN | 1987 | 0 | 0 | (2) |
| 6754 | DEGREE OF DISORDER IN LASER-ANNEALED A3B5 SEMICONDUCTORS FROM RAMAN-SCATTERING SPECTRA | 1987 | 0 | 0 | (1) |
| 6755 | 2-BEAM LASER ANNEALING OF SEMICONDUCTORS | 1987 | 0 | 0 | (2) |
| 6756 | ANOMALOUS RECRYSTALLIZATION AND AMORPHIZATION OF ION-IMPLANTED GAAS UNDER PICOSECOND LASER-PULSES | 1986 | 0 | 0 | (2) |
| 6758 | MELTING OF SEMICONDUCTORS UNDER THE ACTION OF PULSED LASER-RADIATION (REVIEW) | 1986 | 0 | 0 | (2) |
| 6760 | PICOSECOND LASER-PULSE EFFECT ON SI AND A3B5 SEMICONDUCTOR COMPOUNDS | 1985 | 0 | 0 | (2) |
| 6761 | INJECTION OF DEGENERATE ELECTRON-HOLE PLASMA | 1985 | 0 | 0 | (1) |
| 6762 | CONTROL OF ASTIGMATISM AND POLARIZATION OF RADIATION IN THE STRIP HETEROLASER | 1985 | 0 | 0 | (2) |
| 6763 | RAMAN-SCATTERING OF LIGHT IN GALLIUM-ARSENIDE CRYSTALS SUBJECTED TO SUBNANOSECOND LASER-PULSES | 1985 | 0 | 0 | (2) |
| 6764 | MULTIWAVE LASER EMITTERS BASED ON ALXGA(1-X)AS SOLID-SOLUTIONS | 1985 | 0 | 0 | (2) |
| 6765 | WAVELENGTH MULTIPLEXING OF 1.31-MU-M INGAASP BURIED CRESCENT LASER ARRAYS | 1983 | 0 | 0 | (2) |
| 6766 | LATTICE-CONSTANT OF ALXGA1-XP | 1982 | 0 | 0 | (2) |
