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Список цитирования публикации:
LAYERED STRUCTURE FORMATION IN THE ION-IMPLANTED GAAS UNDER THE SINGLE SUBNANOSECOND LASER-PULSE
Элементы 1—5 из 5.
ID
Название публикации
Год
6749
SEMICONDUCTOR-METAL PHASE-TRANSITION IN INSB INDUCED BY A STRONG ELECTROMAGNETIC-FIELD
1988
6754
DEGREE OF DISORDER IN LASER-ANNEALED A3B5 SEMICONDUCTORS FROM RAMAN-SCATTERING SPECTRA
1987
6756
ANOMALOUS RECRYSTALLIZATION AND AMORPHIZATION OF ION-IMPLANTED GAAS UNDER PICOSECOND LASER-PULSES
1986
6760
PICOSECOND LASER-PULSE EFFECT ON SI AND A3B5 SEMICONDUCTOR COMPOUNDS
1985
8981
RAMAN-STUDY OF DISORDER IN LASER-ANNEALED III-V-SEMICONDUCTORS
1988
6749
6754
6756
6760
8981